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| NTE2598 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A VCE = 10V, IC = 1.6A VCB = 10V, f = 1MHz IC = 12A, IB = 2.4A IC = 12A, IB = 2.4A Min - - 15 8 - - - - Typ - - - - 15 470 - - Max Unit 10 10 40 - - - 2.0 1.5 MHz pF V V A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol Test Conditions Min 1100 800 7 800 - - - Typ - - - - - - - Max Unit - - - - 0.5 3.0 0.3 V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 10A, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEO(sus) IC = 12A, IB1 = -IB2 = 2.4A, l = 50H, Clamped ton tstg tf VCC = 400V, 5IB1 = -2.5IB2 = IC = 20A, RL = 20 .810(20.57) Max .236 (6.0) .204 (5.2) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .787 (20.0) .215 (5.45) .040 (1.0) .023 (0.6) B C E Note: Collector connected to heat sink. |
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